AlGaN/GaN HEMT器件研究

Study on AlGaN/GaN HEMT devices

    摘要
  • 摘要: 叙述了AlGaN/GaN HEMT的特点及制造工艺，给出其测试结果，最大跨导～157ms/mm,由S参数测量推出器件的截止频率fT和最高振荡频率fmax分别为12GHz和24GHz。

     

    Abstract: The characteristics and fabrication techniques are reported.The peak DC transcon-ductance of about 157 ms/mm is obtained with HP4155A. On-wafer measurements by HP8510B network analyzer show an extrapolated fT of 12GHz and fmax of 24GHz.

     

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