阴极恒电流法制备SmS光学薄膜

SmS optical thin films prepared by cathodic electrodeposition process with constant current

  • 摘要: 以SmCl3.6H2O和Na2S2O3.5H2O为原料,采用电沉积法在单晶硅(100)和玻璃基板制备了SmS光学薄膜。采用XRD、AFM和紫外可见光分光光度计对薄膜进行了表征。研究了Sm3+/S2O32-、溶液的pH值对于薄膜的物相的影响。结果表明:在Sm3+/S2O32-=1:2,控制溶液pH值为4.50以及沉积1h的条件下,可制备出70nm厚单一晶相且表面比较平整的SmS薄膜,薄膜具有(331)方向的取向性。紫外光谱测试表明所制备的SmS薄膜具有290~300nm的紫外吸收特性,薄膜的禁带宽度约为3.6eV。

     

    Abstract: Current cathodic electrodeposition method was adopted to deposit SmS optical thin films on the surface of Si(100)and glass using SmCl3·6H2O and Na2S2O3·5H2O mixture solutions.The as-deposited thin films were characterized by X-ray diffraction(XRD),atomic force microscopy(AFM)and ultraviolet spectrophotometer.The influence of Sm3+/S2O32- and pH value of the solution on the phase compositions of the films were investigated.Results show that smooth and dense SmS thin film with the thickness about 70nm can be obtained when Sm3+/S2O32-= 1:2 and pH=4.5.The prepared thin films possess an obvious(331)orientation.Transmittance analysis of the film coated glass shows that the prepared thin film exhibits strong absorption band at 290-300nm;the band gap of the thin film is about 3.6 eV.

     

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