Abstract: Ge nanocrystal memory device can be programmed at a relatively low voltage and high speed.This research studies charge storage characterization of non-volatile memory metal insulator silicon（MIS）structures with Ge nanocrystal floating gate.The MIS structure containing Al₂O₃ control gate,a Ge nanocrystal-embedded Al₂O₃ dielectric and a Al₂O₃ tunnel oxide layer,was fabricated by electron-beam evaporation method.Capacitance-voltage（C-V）measurements at 1 MHz revealed promising electrical characteristics of the MIS structure.The flat-band voltage shift（ΔVFB）is 0.96V and relatively high stored charge density（Nt）of 4.17×10¹² cm^-2 is achieved.ΔVFB and Nt become small when the frequency varies from 1kHz to 1MHz.They also decrease when the voltage scan velocity degrades.