Abstract: The structure and territory designments of PZT piezoelectric thin film micro-switch have been processed.Basing on the techniques traits of MEMS process and standard IC based on silicon,the key techniques and type technical conditions have been obtained in cause of system technical flow of PZT piezoelectric thin film micro-cantilever beam based silicon.At the same time,the preparation techniques of PS（porous silicon）have been investigated by means of experiment.At last the sample of PZT piezoelectric thin film micro-switch has been successfully etched and laid so lid experiment foundations for the research and development of the system on chip（SOC）.