InGaAs/InP中离子注入和新型HPT

Ion implantation in InGaAs/InP and novel HPT

    摘要
  • 摘要: InGaAs/InP是制作光电器件与微波器件的重要材料。离子注入InGaAs/InP做掺杂或制作高阻层是人们十分关注的研究课题。采用Fe+注入InGaAs/InP得到了电阻率升高的好结果。用Be+注入制作了新结构HPT的基区。研制成功了在1.55μm波长工作的InGaAs/InP新结构光电晶体管,在0.3μW入射光条件下，光电增益为350。

     

    Abstract: InGaAs/InP was implanted with 360 KeV 5×1014cm-2 Fe+ and processed by rapid thermal annealing. The resistivity of InGaAs layers was raised. n-InGaAs was implanted with Be+. p-InGaAs base of novel HPT was formed after RAT. Novel HPT was fabricated by ion implantation. The photocurrent gain reached 350 for 0.3μ Wincident light power with the warelength of 1.55 μm.

     

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