Abstract: High-quality polycrystalline silicon films composed of large and uniform columnar grains with a moderate lateral grain size of ～1μm,vertical grain size of ～ 20μm and crystalline fraction（f_c） over 95 % have been fabricated on glass substrates with metal Cu-induced layer by hot-wire chemical vapor deposition（HWCVD）.Influence of the Cu-induced layer on the crystallographic growth orientation,the crystalline fraction and the grain sizes of poly-Si films were characterized by means of X-ray diffraction（XRD）,Raman spectrum and scanning electron microscopy（SEM）.It was found that the grain size and the crystalline fraction of poly-Si films was increased,and the crystallization temperature decreased due to the presence of Cu-induced layer.Moreover,the Cu-induced layer also influenced the crystallographic growth orientation in certain range of hot-filament temperature.