总剂量辐照加固的PDSOI 8位微控制器

Total dose radiation hard PDSOI CMOS 8 BIT MCU

摘要: 对辐照加固的部分耗尽(Partially Depleted)SOI 8位微控制器(MCU)的总剂量辐照特性进行研究。该微控制器功能完全兼容intel MCS-51系列的80C51微控制器,采用1.2μm辐照加固的PDSOI CMOS工艺技术制备,芯片尺寸约为6.4mm×6.8mm。对该微控制器及同工艺条件下的MOSFET进行Co⁶⁰辐照试验表明,在工作电压5V下,其总剂量加固水平高达1×10⁶rad(Si),完全满足航空航天领域应用的要求。

Abstract: The total dose hard partially depleted SOI 8 bit microcontroller（MCU） was investigated.The microcontroller was functionally compatible with the standard intel MCS 51 families-80C51 microcontroller,1.2μm radiation hard PDSOI CMOS technology is developed for the MCU,chip size: 6.4mm×6.8mm.The total dose radiation Co₆0 test for the MCU and MOSFETs,which had the same technology,total dose hardness is up to 1×10⁶ rad（Si） at 5V power supply.This MCU satisfied the need of aerospace.