场发射真空传感器
Field emission vacuum sensor
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摘要: 场发射真空传感器是采用MEMS加工工艺研制一种新型的基于硅尖阵列场发射原理的微型真空传感器。通过理论分析,确立了该种传感器中硅尖场发射电流与真空度的关系。并利用干法刻蚀工艺,在硅片上制作了高3.2μm,曲率半径小于70nm的200×42硅尖阵列。保持阳极与硅尖距离为1μm的情况下,可以观察到阳极电压为10V左右时开始有明显的场发射电流。实验结果表明,在10V-15V的输入电压范围内,通过测试场发射电流所得到的真空度值,其最大误差不超过10%。该真空传感器具有制作简单、易于集成、信号测量容易、自身不带密封腔等优点,具有潜在的应用前景和市场潜力。Abstract: A micro vacuum sensor based on field emission of silicon tips array is brought forward firstly by integration of the MEMS technology.The relation between emission current and pressure has been introduced by theoretical analysis.200 42 tips array with 3.2μm height and below 70nm diameter has been fabricated on the silicon substrate using dry etching process.Keeping 1μm distance between the silicon tips and anode electrode,the emission current can be observed at 10V anode voltage.From test results,the micro vacuum sensor has a lower error with the range of 10-15V,which less than 10 percent can be achieved.Because this micro vacuum sensor is characterized of high sensitivity,easiness for integration and no sealing chamber in the sensor,it has very promising applications and potential market.
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