Abstract: Cu,Al and Ti films of ~10 nm thickness were deposited on porous silicon（PS） at room temperature using Filtered Cathodic Vacuum Arc system and annealed at 800℃ for 10 min in vacuum.The PS layers were obtained by anodization of Si wafer.X-ray photoelectron spectroscopy,photoluminescence（PL）,photo-absorption（PA）,and X-ray diffraction studies revealed that after annealing,Cu-and Ti-deposited samples exhibited obvious PA red-shift and Si-2p level shift,which arise from the crystal field variation due to the formation of Cu/Ti silicides at the surface as well as the conduction electronic transportation.