具有负有效质量的半导体载流子速度-电场特性

Velocity-field characteristics of semiconductors with negative-effective-mass

  • 摘要: 由于p-GaAs量子阱的价带色散关系存在负有效质量区域,导致空穴速度-电场曲线具有负微分速度特性。本文采用非抛物平衡方程理论计算得到了量子阱空穴的“N”形速度与电场关系,并首次给出了拟合得到的解析表达式。计算中,考虑了空穴-杂质散射,空穴-声学声子散射和空穴-光学声子散射等散射机制,讨论了晶格温度对速度-电场关系的影响。

     

    Abstract: There is a negative-effective-mass (NEM) section in the hole energy dispersion relation for the ground subband of p-quantum-well (QW).We present a model calculation of velocity-field characteristics of holes with a NEM dispersion relation,by using nonparabolic balance-equation theory with a realistic treatment of the scatterings by hole-impurity,hole-acoustic phonon,hole-polar-optic-phonon,and hole-nonp olar-optic-phonon interactions.A "N-shaped" velocity-field relation is yielded,which is quite different from the two-valley result for electrons in bulk GaAs.An analytical expression for the "N-shaped" curve is obtained for the first time.The dependence of velocity-field relation on lattice temperature is also discussed.

     

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