MESFET的源漏电压和旁栅间距对旁栅阈值电压的影响

Effect of MESFET VDS and distance of sode-gates on side-gating threshold voltage

    摘要
  • 摘要: 研究了MESFET的源漏电压对旁栅阈值电压的影响和旁栅间距与旁栅阈值电压的关系。结果表明源漏电压的大小对旁栅阈值电压有一定的影响，旁栅阈值电压的大小与旁栅间距大致成正比。

     

    Abstract: Effect of MESFET VDS on the side-gating threshold voltage and the relationship between the distance of the side-gates and the side-gating threshold voltage was investigated. The results show that the VDS has some effect on the side-gating threshold voltage and the side-gating threshold voltage has a direct relationship to the distance of the side-gates almost.

     

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