高取向锐钛矿TiO<sub>2</sub>薄膜的MOCVD法制备与表征

高取向锐钛矿TiO₂薄膜的MOCVD法制备与表征

摘要: 采用热壁低压MOCVD方法，以Ti（OC₄H₉）₄为源在SiO₂/Si衬底上制备出了高取向锐钛矿TiO2薄膜。用X射线衍射技术研究了沉积温度和衬底对薄膜的结构和相组成的影响规律，采用XPS和SEM分别研究薄膜的组成和形貌。结果表明，当沉积温度为500⁰C和600⁰C时，薄膜为锐钛矿结构，300⁰C和400⁰C时，薄膜以无定形结构为主。薄膜的组成为TiO₂，衬底影响薄膜的相组成。不同沉积温度下制备的薄膜具有不同的显微结构，薄膜厚度均匀。

Abstract: In this paper, highly oriented anatase TiO₂ thin films were prepared by hot wall low pressure MOCVD using Ti（OC₄H₉）₄ as liquid source. X-ray diffraction was used to characterize the structure and phase composition of the films. XPS and SEM were employed to study the composition and microstructure of the thin films respectively. Research results showed that the thin films prepared at 500⁰C and 600⁰C are of anatase structure, while the thin films prepared at 300⁰C and 400⁰C are mainly amorphous. The composition of the thin films is TiO₂. Deposition temperature affects the microstructure of the films, and the thickness of the films is uniform.