磁控溅射Ni-Mn-Ga薄膜的磁致应变
Magnetic-field-induced strain of Ni-Mn-Ga thin films prepared by magnetron sputtering
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摘要: 采用直流磁控溅射的方法,在NaC l基底上沉积了Ni-Mn-Ga薄膜,对薄膜进行了形貌观察、微区成分及结构分析,并测量了薄膜的磁致应变。结果表明,薄膜表面可见大小不一的团簇颗粒,具有明显的岛状结构,表明Ni-Mn-Ga薄膜的形成为典型的核生长型机制。热处理前的薄膜具有部分非晶存在,热处理后薄膜晶化为多晶形态。无约束薄膜在磁场下呈现负的磁致应变,在1.3T磁场下,其最大应变值可达-0.008%,并且可以完全恢复。Abstract: Ni-Mn-Ga thin films were deposited by dc magnetron sputtering on NaCl substrates.The surface morphology,compositions and microstructures of the films were investigated and the magnetic-field-induced strain was measured.The results show that the films deposited on NaCl substrates have a surface with granules cluster of various sizes.A clear island structure of the films is observed,which indicates the films are formed by typical nuclear-growing mechanism.There is a partial amorphous state in the films before heat treatment. The heat treatment leads to polycrystalline state in the films.The freestanding thin films exhibit a recoverable shrink magnetic-field-induced strain of about-0.008% at the magnetic field of 1.3T.
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