阴极恒电流法电沉积SnS薄膜

Preparation of SnS film by constant current cathodic electrodeposition

  • 摘要: 用阴极恒电流沉积法制备SnS薄膜。研究了溶液的pH值、离子浓度比、电流密度等电沉积参数对薄膜组分的影响,得出制备SnS薄膜的理想的工艺条件为:pH=2.7,Sn2+:S2O32-=1:5,J=3.0mA·cm-2,t=1.5h,并制备出了成分为Sn0.995S1.005的膜层。用扫描电镜观察了该薄膜的表面形貌,用X射线衍射分析了其物相结构,表明它是具有正交结构的SnS多晶薄膜,晶粒大小不一,在200-800nm之间。用分光光度计测量了该薄膜在400-3000nm波段的透射光谱和吸收光谱,发现其在400-900nm波段的透过率较低,在950-1000nm附近有明显的吸收边,在波长大于1000nm后其透过率较大。

     

    Abstract: SnS films were prepared by constant current cathodic electrodeposition.Influences of elec-trodeposition parameters,such as the pH of the electrolyte,concentration ratio of Sn2+ and S2O32- ions,and current density,on the composition of the films are investigated.The experiments show that the best electrodeposition conditions for SnS films are pH =2.7,Sn2+:S2 O32- =1:5,J=3.0mA·cm-2, t=1.5h.The film with the composition of Sn0.995 S1.005 was prepared,and it was characteriz ed with XRD and SEM.The as-deposited film is polycrystalline with orthorhombic structure and grain sizes of 200-800nm.The transmittan ce and absorption spectrum of the film were measured,and it is found that the transmittance is lower in the spectra of 400-900nm,but it is higher at the wavelengths larger than 1000nm,and the re is an ob vious absorption edge in the vicinity of 950-1000nm.

     

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