MgB2的高压效应研究

Effect of In-situ Hydrostatic Pressure on MgB2

  • 摘要: 我们研究了高压对MgB2块材超导的超导转变温度Tc、临界电流密度Jc、不可逆场Hirr以及钉扎机制的影响。结果显示压力降低了样品的TcJc,使不可逆线向低场移动。更有趣的是压力使样品中主要的钉扎机制由δTc转变为δ\ell 钉扎,即由于缺陷密度的分布导致电子运动的平均自由程在空间的涨落钉扎。另外,通过磁弛豫的测量,结果显示压力加快了磁通的蠕动,降低了有效钉扎能和Jc,磁通束尺寸的大小变化不大。

     

    Abstract: We performed a systematic study of the superconducting transition temperature (Tc), critical current density (Jc), irreversibility field (Hirr) and flux pinning mechanism in MgB2. The Tc and Jc are significantly decreased for low and high temperature and field, and the Hirr line is shifted to lower fields by the HP up to 1.2 GPa. Remarkably, we found that the hydrostatic pressure can induce a transition from the δTc to the δ\ell pinning mechanism. The charge-carrier mean free path fluctuation, δ\ell pinning, is responsible for the pinning mechanism in MgB2 at 1.2 GPa. According to the magnetic relaxation measurements, our results show that the pressure reduce the pinning energy and the critical current density, and increase the vortex creep rate. The size of flux bundles is almost constant.

     

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