BJMOSFET静态特性的解析模型及模拟分析

Simulation and analysis of static characteristics for BJMOSFET’S analytical

    摘要
  • 摘要: 建立了新型半导体功率器件—双极型压控晶体管（BJMOSFET）的直流解析模型，通过提取模型参数，运用电路模拟软件PSPICE的多瞬态分析法对BJMOSFET的直流特性进行了模拟，分析得出这种新型器件在相同结构参数和同等外界条件下与传统MOSFET相比，电流密度提高30％～40％。

     

    Abstract: The DC analytical model has been built for the bipolar voltage control transistor which is a novel semiconductor power device. Appling the multiple-transient of the PSPICE software, the DC characteristically graphs of BJMOSFET has been simulated. The results show that the current density of BJMOSFET is 30~40% larger than that of power MOSFET under the same operating conditions and structure parameters.

     

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