气相CdCl2退火对CdTe多晶薄膜性能的影响

Influence of vapor CdCl2 treatment on the properties of CdTe polycrystalline thin films

  • 摘要: 利用近空间升华法在Ar+O2气氛下沉积了CdTe多晶薄膜,并在气相CdCl2氛围下进行了不同温度的退火,对样品进行了厚度、XRD、SEM、透过谱,σ-T等性能测试,结果表明:退火后CdTe多晶薄膜在(111)面上仍具有择优取向,退火能使晶界钝化,增加再结晶并促进晶粒长大;但对薄膜的透过率没有影响,退火后,暗电导(σdark)增加,电导激活能(Ea)减少。得到了最优化的退火条件。

     

    Abstract: In this work,the CdTe thin films have been treated by CdCl2 after being deposited by close-space sublimation(CSS).The films were investigated by X-ray diffraction(XRD),scanning electron microscopy(SEM),UV/Vis and the relationship of dark conductivities temperature(σT).The results indicate that(111) preferred direction of crystalline grains still exists after annealing;the treatment with CdCl2 can passivate recombination sites on grain boundaries,promote recrystallization and grain growth;The dark conductivities(σdark) increase,and the conductivity activation energy(Ea) decreases with the annealing temperatures increasing.As a result,an optimization anneal condition has been achieved.

     

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