Pb1-xLaxTiO3薄膜的制备及介电性质的研究

Study on properties of Pb1-xLaxTiO3 thin films prepared by Sol-gel

  • 摘要: 在Pt/Ti/SiO2/Si(100)衬底上用溶胶-凝胶法制备了Pb1-xLaxTiO3薄膜,对膜进行XRD、SEM、介电、铁电性能测试,研究了退火温度、掺La量对薄膜性能的影响,结果发现在600 ℃下退火1 h的PLT薄膜呈现钙钛矿结构,具有(100)面择优取向。在摩尔比x≤0.2的范围内,薄膜的矫顽场、剩余极化强度都随着掺La量的增加而降低,而其相对介电常数和介质损耗却随着掺La量的增加而增加。

     

    Abstract: The Pb1-xLaxTiO3(PLT) thin films were fabricated by Sol-gel spinning process on Pt/Ti/SiO2/Si(100) substrates.Effects of La dopant on dielectric and ferroelectric properties were investigated.From the analysis,the coercive field and remnant polarization are found to decrease with increasing La concentration,while the dielectric constant and the loss tangent are found to increase according to the increase of La concentration.The film annealed at 600 ℃ for 1 h shows perovskite phase and preferential (100) orientation,and has typical hysteresis loops.

     

/

返回文章
返回