Abstract: BaTiO₃ ferroelectric thin films have been prepared on Si substrate by Metalorganic Chemical Vapor Deposition （MOCVD） at atmospheric pressure. Ba（DP M）₂ and titanium isopoproxide（TIP） were used as metalorganic source. The structure of the thin films was studied by SEM and XRD. The prepared films atsubstrate temperature of 700℃ on Si substrate showed polycrystalline structure with smooth and uniform surface. After rapid thermal annealing, the films have fully textured with （001）-orientation, and have a dielectric constant（ε） of 107. The relationship between the temperature of substrates and crystallographic orientations was investigated, the influence of substrate on the physical properties of the films was also discussed. The 100nm-thick film exhibited remnant polarization（P_r） of 2.0μC/cm², and coercive field（E_c） of 4.0KV/cm.