Abstract:
ZnO-V
2O
5-SnO
2 based varistor ceramics with 0.01-0.2mol% Bi
2O
3 were prepared.The conventional mixing-oxides procedure was adopted.The samples were sintered at 800℃ for four hours in ambient of air.The effect of Bi
2O
3 addition on the relative density,microstructure and electrical properties of the ZnVSnO ceramics were systematically investigated by means of high precision scale,SEM,XRD and an automatic I-V monitor.The results show: the relative densities of all tested samples exceed 98% of their theoretical density,indicating the increase of Bi
2O
3 within the studied range of 0.01-0.2mol% has no obvious influence upon the density of the ZnVSnO ceramics.Meanwhile,the average grain sizes of the ceramics decrease from 2.13μm to 1.54μm.As a result,the breakdown voltage of the ceramics was found to increase at the same time.Besides of ZnO main phase,all four studied samples consist of Zn
2SnO
4 and Bi
2Sn
2O
7 as their secondary phases.Samples with 0.2mol% Bi
2O
3 exhibit the optimum properties.Their breakdown field,nonlinear coefficient and leak current density of the optimum samples are 2842V/mm,51.2 and 0.0925mA/cm
2 respectively.