微量Bi2O3对ZnVSnO基压敏陶瓷显微结构和电学非线性的影响

Effect of minor Bi2O3 doping on the microstructure and electrical nonlinearity of the ZnVSnO based varistor ceramics

  • 摘要: 采用传统混合氧化物工艺在800℃经4小时烧结制备了0.01-0.2mol% Bi2O3掺杂的ZnO-V2O5-SnO2(ZnVSnO)基压敏陶瓷,采用电子天平、SEM、XRD和I-V测试仪研究了其密度、显微结构和电性能随Bi2O3含量的变化。结果表明:随Bi2O3含量升高,ZnVSnO基陶瓷密度变化不大,相对密度均超过了98%;样品均由ZnO主晶相和少量的Zn2SnO4、Bi2Sn2O7第二相组成,但平均晶粒直径从2.13μm降到1.54μm,样品的压敏场强和非线性系数随之升高。当Bi2O3掺杂量为0.2mol%时样品性能最优,其压敏场强、非线性系数和漏电流密度分别为2842V/mm、51.2和0.0925mA/cm2

     

    Abstract: ZnO-V2O5-SnO2 based varistor ceramics with 0.01-0.2mol% Bi2O3 were prepared.The conventional mixing-oxides procedure was adopted.The samples were sintered at 800℃ for four hours in ambient of air.The effect of Bi2O3 addition on the relative density,microstructure and electrical properties of the ZnVSnO ceramics were systematically investigated by means of high precision scale,SEM,XRD and an automatic I-V monitor.The results show: the relative densities of all tested samples exceed 98% of their theoretical density,indicating the increase of Bi2O3 within the studied range of 0.01-0.2mol% has no obvious influence upon the density of the ZnVSnO ceramics.Meanwhile,the average grain sizes of the ceramics decrease from 2.13μm to 1.54μm.As a result,the breakdown voltage of the ceramics was found to increase at the same time.Besides of ZnO main phase,all four studied samples consist of Zn2SnO4 and Bi2Sn2O7 as their secondary phases.Samples with 0.2mol% Bi2O3 exhibit the optimum properties.Their breakdown field,nonlinear coefficient and leak current density of the optimum samples are 2842V/mm,51.2 and 0.0925mA/cm2 respectively.

     

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