Abstract: In order to realize the integration of ferroelectric thin film and semiconductor substrate,Al₂O₃ was used as buffer layer.First,Al₂O₃ buffer layer was grown on Si（100）,polycrystalline diamond（111）substrates with the thickness about 20nm by vacuum electron-beam evaporation method,then lead zirconate titanate（PZT）thin film was deposited on these substrates by pulsed laser deposition（PLD）.XPS results suggest that at high vacuum ambient,stoichiometric Al₂O₃ thin film can be obtained by the method of electron-beam vaporizing solid-state Al₂O₃ source.XRD results show that when the temperature is 550℃,pyrochlore PZT film with（222）orientation can be obtained on both substrates,and when substrate is diamond,highly preferential（101）orientation perovskite PZT can be prepared by the processes:（1）low-temperature（350℃）deposition;（2）650℃ annealing for 5 min in air ambient.AFM images show that the mean roughness of the PZT film is 9.8nm on silicon,and 17.2nm on diamond respectively.