P型微晶硅材料及在薄膜太阳电池上的应用

P-μc-Si thin film material and its application to thin film solar cells

摘要: 采用VHF-PECVD技术沉积硼掺杂的P型微晶硅薄膜材料,在硅烷浓度(SC)为0.8%,反应气压93Pa时,随等离子体功率的增加,材料的晶化率和电导率先增大,后减小;薄膜的透过率随功率的增大而增加。将获得的P型微晶硅薄膜应用在微晶硅薄膜太阳电池中,电池结构为glass/p-μc-Si:H/I-μc-Si:H/n-μc-Si:H/Al,厚度约1μm,没有背反射电极的情况下,电池效率达到了7.32%(V_oc=0.520V,J_sc=21.33mA/cm²,FF=64.74%)。

Abstract: P-type microcrystalline silicon thin film was deposited by VHF-PECVD technology. Under silane concentration（SC） 0.8% and reaction pressure 93Pa, with plasma power increasing, the crystalline volume fraction and conductivity of materials increase first, then decrease. The transmission increases with plasma power increasing. The p-μc-Si:H thin film was μsed in μc-Si solar cells, the configuration of which is glass/p-μc-Si:H/I-μc-i:H/n-μc-Si:H/Al with thickness of about 1μm, without rear reflection. The conversion efficiency is 7.32%(V_oc=0.520V,J_sc=21.33mA/cm², FF=64.74%).