Abstract: A vertical-cavity surface-emitting laser（ VCSEL） structure which employs InAsP/InGaAsP strain-compensated multiple quantum wells and InP/InGaAsP distributed Bragg reflector（ DBR） mirrors were grown by gas-source molecular-beam epitaxy（ GSMBE） on InP（ 100） substrates. 1.3μ m VCSEL were fabricated by wet etching and polyimide isolation techniques. The device demonstrates continuous- wave single-mode operation at room temperature and threshold current of about 4mA. The stop band and cavity mode measured are in good agreement with simulation. The gain peak position measured from edge-emitting electroluminescence accords with the cavity mode position.