Abstract: This paper presents the growth and characterization of zinc oxide piezoelectric thin film.In this paper,we studied the influence of annealing process and different substrates,including silicon,aluminum layer and silicon nitride thin film on silicon,on the piezoelectric performance of ZnO thin film by using XRD and SEM to analyze C-axis orientation and crystalline quality of ZnO thin film using magnetron sputtering technology.Then we develop a fabrication process,for which the aluminum is still used as the bottom electrode but isolated from the ZnO thin film by a layer of silicon nitride thin film,to meet the requirements of the quality of the ZnO thin film growth and the compatibility with CMOS technology.