Abstract: The structure and character of high-power quantum well remote junction semiconductor lasers are presented. The electrical noise of the devices is measured, the dependence of the noise on the frequency as well as on bias current is discussed. The results indicate that the threshold current of 808nm high power quantum well remote junction semiconductor laser decreases during early aging time, its electrical noise is mainly 1/f noise in low frequency and has maximum value around the threshold, and there is a relation between the noise and device quality.