迁移增强外延GaAs/Al/GaAs材料生长及其俄歇分析

GROWTH AND AUGER ANALYSES OF GaAs/Al/GaAs BY MIGRATION-ENHANCED EPITAXY

摘要: 在配有液N₂冷却As快门的分子束外延设备中利用迁移增强外延(MEE)方法于低温下生长了GaAs/Al/GaAs结构材料。俄歇测量结果表明,用MEE方法生长的材料中Al和GaAs之间的互扩散大大减小,在500℃热处理后也没有引起多大的互扩散。我们还发现在高指数GaA5(113)B面上用MEE方法生长GaAs薄膜效果更好。

Abstract: The GaAs/Al/GaAs structures have been grown by using migration-enhanced epitaxy(MEE)method at low temperature on a molecular beam epitaxy system with a liquid N₂ cooling As shutter. It is shown by Auger profiles that with MEE the interdiffusion between Al and GaAs is reduced by a large amount and heat treatments, up to 500℃, caused no significant interdiffusion. Our results also indicate that MEE method is more efficient for growth of GaAs film on GaAs(113)B high-index surface.