Abstract: C-axis inclined AIN films were prepared by rotating the turnplate with different angles in RF magnetic sputtering system.The Crystalline orientation and structure of the AlN films were investigated by X-ray diffraction,the cross-section of the inclined AlN films was observed by field emission scanning electron microscopy.The results show that AlN films exhibit inclined columnar structure up to 25°with the rotating angle of 10°.The growth mechanism of C-axis.inclined AlN films was discussed in short.