Abstract: ZnO films under different growth te mperature were grown on c-plane of sa pphire sub-strates by RF-plasma-enhanced MOCVD.These samples were characterized with XRD and SEM methods.Furthermore,the influences of growth temperature on growth velocity,surface structure and stoichiometry of oxygen and zinc in the films were investigated in detail.The parameter of growth temperature was optimized.The growth rate of ZnO film is high at 520℃,while its rough-ness is low.Growing at 550℃,ZnO thin film with atomic ratio（O:Zn =49.99:50.01）is obtained.