基于高阻硅衬底的微波传输线和数字移相器

Microwave transmission line and phase shifter on high-resistivity silicon substrates

  • 摘要: 在高阻硅衬底上微波传输线以及工作在7.5~8.5GHz频带的四位数字移相器。测试表明,在高阻硅衬底上制备的50Ω微带线在5~15GHz频率范围内的插入损耗低于0.8dB/cm;在同样衬底上用混合集成技术制作的7.5~8.5GHz四位数字移相器的各状态插入损耗为(7.5±3)dB,回波损耗大于12dB,均方根(RMS)相位误差小于5°。具有良好的微波器件性能。

     

    Abstract: Microwave transmission line and a 7.5-8.5GHz 4 bit digital phase shifter are designed and fabricated on high-resistivity silicon(HRS).The insertion loss of the 50Ω transmission line is below 0.8dB/cm in the range of 5-15 GHz,which demonstrates that high-resistivity silicon can be used as the microwave substrate.Furthermore,the measured results of the 7.5-8.5GHz phase shifter shows that the insertion loss is(7.5±3)dB and the return loss is above 12dB.The RMS phase accuracy is less than 5°.

     

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