高压n LDMOS漂移区的设计研究
Design and investigations of HV-nLDMOS drift region
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摘要: 讨论了漂移区长度及注入浓度等关键参数对于漏结击穿电压的影响,并详细分析了矩形版图结构的LDMOS器件中,远离沟道一侧的漂移区阱长度对于击穿特性的影响。分析了矩形版图结构的LDMOS器件中,远离沟道一侧的漂移区阱长度对于击穿特性的影响。运用RESURF技术对于高压LDMOS的漂移区进行设计和优化。研制出耐压170V的nLDMOSFET。并通过试验结果证明了分析的正确性。Abstract: In this article,the effect of structural and electrical parameters,especially,the length of drift region well extended away from channel region for a rectangular layout LDMOS transistor,on breakdown voltage of drain junction were discussed.The drift region of high voltage nLDMOS device was designed and optimized by using RESURF technique.The nLDMOSFET with a breakdown voltage of 170V was fabricated.The experimental results are accordant with the simulation ones.
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