Abstract: Effects of γirradiation on InGaAs detectors were studied. The dose of γirradiation ranged from 10Mrad to 30Mrad. Response spectrum, current-voltage characterization, signal and noise were measured before and after irradiation to analyze the irradiation effects. After irradiation, the response spectrum and single have no noticeable change. The dark current and noise increases with the irradia-tion dose increasement,which indicates that performance of the detectors becomes worse with increasingirradiation dose.