单电源低电压InGaP/InGaAs PHEMT低噪声单片放大器

InGaP/InGaAs PHEMT LNA with low voltage single power supply

摘要: 制备了增强型InGaP/InGaAs PHEMT器件结构、阈值控制以及单电源低电压低噪声单片放大器。获得了阈值电压接近0V的增强型InGaP/InGaAs PHEMT器件，并在此基础上设计制作了可在1.5～3V低电压和单电源下工作的2.5GHz低噪声单片放大器。同时对该电路性能的进一步提高进行了模拟分析。

Abstract: An enhanced InGaP/InGaAs PHEMT and a LNA, which can operate under a single power supply of 1.5~3V is presented in this paper. The device has the threshold voltage near 0 V. The LNA can work at 2.5GHz with a gain of over 20dB and N_f of 3.43dB. The analysis shows that it is important to reduce the parasitic resistance of the inductor in the LNA input circuit for reducing the noise figure N_f further.