SOI NMOS晶体管在高剂量的X射线与<sup>60</sup> Coγ射线辐射作用下的背栅阈值电压漂移饱和效应的研究及比对

SOI NMOS晶体管在高剂量的X射线与⁶⁰ Coγ射线辐射作用下的背栅阈值电压漂移饱和效应的研究及比对

摘要: 利用标准SIMOX材料制作了部分耗尽环型栅NMOS晶体管,并在ON偏置条件下分别对其进行了10keV X射线及⁶⁰ Coγ射线总剂量辐照实验。实验结果表明,在两种辐射条件下NMOS晶体管的背栅阈值电压漂移量都会随着辐照剂量的升高而趋于饱和。实验分析并研究了这种现象的机理,并发现在较低的辐照剂量下⁶⁰ Coγ射线造成的背栅阈值电压漂移量较大,但在高剂量条件下X射线造成的漂移量将超过⁶⁰ Coγ射线。

Abstract: Partially-depleted NMOS transistors with enclose-gate structure were fabricated on standard SIMOX substrate and tested using 10-keV X-ray and ⁶⁰ Co radiation sources respectively.The results show the effect of saturation of back-gate threshold voltage shift in NMOS transistors at high total dose, no matter under what irradiation.We have studied this effect and found that the back-gate threshold voltage shifts induced by ⁶⁰ Coγrays is larger than that induced by X-rays at a lower total dose.However,the case is contrary at high total dose.