基于非晶软磁层的巨磁电阻单元性能研究

Characteristics of the element with giant magneto-resistance based on the amorphous film

    摘要
  • 摘要: 采用剥离工艺制备了单元大小为10μm×18μm的CoNbZr/Co/Cu/Co和N iFe/Co/Cu/Co多层膜结构的3×3自旋阀单元阵列,并测试了自旋阀单元的静态和动态巨磁电阻特性。结果表明CoNbZr层对快速磁场变化具有良好的线性响应特性。与N iFe/Co/Cu/Co自旋阀单元相比,微米尺度的CoNbZr/Co/Cu/Co自旋阀单元具有更良好的自旋电子特性,可以应用到包括MRAM器件在内的自旋电子器件中。

     

    Abstract: The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/Co were fabricated by lift-off technology.The static GMR and dynamics GMR behaviors were measured.The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field.The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/Co spin valve element.The CoNbZr/Co/Cu/Co spin-valve element can be applied to spin-electronic devices including magnetic random access memory.

     

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