ZnAl2O4:Mn光致发光纳米薄膜的制备

Preparation of ZnAl2O4:Mn photoluminescence nanocrystalline thin-film

  • 摘要: 利用喷雾热解技术,在硅片衬底上生长了锰掺杂ZnAl2O4光致发光纳米薄膜。XRD分析测试结果表明,当AlCl3在Zn(OH)2中的含量高于20%,衬底温度高于100℃时,在衬底上形成ZnAl2O4-ZnO纳米复合薄膜;该复合薄膜经0.1 mol/L盐酸处理后,形成ZnAl2O4尖晶石矿纳米薄膜。同时研究了金属锰离子掺杂ZnAl2O4纳米薄膜的光致发光性能,荧光光谱实验结果表明这种利用喷雾热解技术生长的掺锰ZnAl2O4尖晶石纳米薄膜,在525nm附近有一发光带,为Mn2+4T1(4G)—6A1(6S)跃迁。

     

    Abstract: The ZnAl2O4: Mn photoluminescence nanocrystalline thin-film was grown on Si substrate. by using technique of spray pyrogenation. The result of the XRD analyses shows when content of the AlCl3 in Zn(OH)2 is more than 20% and the temperature of substrate is higher than 100℃, the ZnAl2O4-ZnO nanocrystalline compound film can be formed on the substrate. This film becomes the nanocrystalline film of spinel ZnAl2O4 after being processed by 0.1 mol/L hydrochloric acid. And the photoluminescence properties of the Mn2+ doped ZnAl2O4 nanocrystalline film were studied. The fluorescence spectrum shows a luminescent band in the 525 nm neighborhood, resulted from 4T14G)-6A16S) transition of the Mn2+ for this Mn2+doped ZnAl2O4 spinel nanocrystalline film.

     

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