螺旋波等离子体沉积纳米硅薄膜结构特性

Structural properties of nanocrystalline silicon films depositee by helicon wave enhanced chemical vapor deposition

摘要: 采用螺旋波等离子体化学气相沉积（HWPCVD）技术,以SiH₄作为源反应气体在Si（100）和玻璃衬底上制备了纳米Si薄膜。通过X射线衍射（XRD）、Raman光谱、原子力显微镜（AFM）对所制备的材料结构和形貌等特性进行表征,分析了纳米Si薄膜结构随衬底温度变化的规律。实验结果表明,在较低的衬底温度（100-300℃）范围内,可以实现高晶化度纳米Si薄膜的沉积,颗粒大小在4-8nm之间,样品的晶化度随着衬底温度升高而升高,晶粒大小也随之增大,样品表面光滑,晶粒分布均匀。

Abstract: Nanocrystalline Si films were deposited on Si （100） and glass substrate by helicon wave plasma chemical vapor deposition （HWPCVD） technique with SiH₄ as reaction gases. X-ray diffraction （XRD）, Raman spectroscopy and atom force microscopy （AFM） were used to investigate the structure and surface morphology of the films respectively. The results indicate that the films containing Si nano -crystalites can be deposited under the substrate temperature of 300℃, with an average dimension between 4nm to 8nm. It is found that the crystalline fraction and the grain size of the films increase with increasing substrate temperature. The surface of all the films is smooth and the nanocrystalline grains are uniform relatively.