掺硼金刚石薄膜的电化学性能

Electrochemical properties of boron-doped diamond thin-film

  • 摘要: 利用循环伏安法,通过对比掺硼金刚石薄膜电极和铂/金刚石电极分别作为工作电极时的循环伏安曲线,分析了两种电极表现出的电化学性能差别,并利用能级理论进行了机理探讨。结果表明掺硼金刚石薄膜电极具有宽的电化学窗口(宽度约为3V)、良好的化学稳定性和极低的背景电流(接近0),是一种较有潜力的电化学电极材料。

     

    Abstract: By cyclic voltammetry, electrochemical properties of the boron-doped diamond thin-film electrode were investigated compared with those of Pt/BDD electrode. It shows that the boron-doped diamond thin-film electrode has wide electrochemical window (approximate 3V), excellent chemical stability and low background current (near zero ). At the same time, the result was analyzed with energy level theory. All the works show that the boron-doped diamond thin film is a kind of ideal potential electrode.

     

/

返回文章
返回