Abstract: With the development of the multi-junction solar cell technology,four -junction InGaP/GaAs （InGaAs）/（New material）/Ge solar cells are a widely-pursued route toward higher efficiencies.Quaternary compound material Ga_1-xIn_x As_1-yN_y has the ability to achieve a bandgap of 0.95～1.05eV,furthermore, with an optical composition it is lattice-matched to GaAs and Ge,which is the most promising next-generation solar cells material.In the paper,We have designed and simulated the InGaP/GaAs/GalnAsN/Ge solar cell structure with the software Apsys for the first time.Compared with the traditional structure InGaP/GaAs/Ge,InGaP/GaAs/GaInAsN/Ge achieve a higher conversion efficiency.