Abstract: Au and Al electrodes were deposited by thermal evaporation onto CdZnTe surfaces,the effects of annealing conditions on the properties of Al/CdZnTe contact were studied.The sample was annealed at varies temperature in the region from 100℃to 300℃for 5 min under·N₂ ambience.Room temperature I-V and C-V characteristics of the sample annealed at different temperature were measured by Agilent 4155c Semiconductor Parameter Analyzer and Agilent 4294A impedance analyzer respectively.I-V and C-V curves shown that annealed at low temperature,the Schottky barrier height of Al/CdZnTe increases, ideal factor is close to 1,and the capacitance of the Schottky reduces for almost 50%.However,annealing at the temperature higher than 250℃,the Schottky barrier height decreases,meanwhile the ideal factor deviates from 1,and the capacitance of the Schottky is decreased for an order.