Cr2O3对(Co,Ta)掺杂的SnO2压敏电阻电学特性的影响

Effect of Cr2O3 on the electrical properties of (Co,Ta )-doped SnO2 varistors

  • 摘要: 研究了Cr对(Co,Ta)掺杂的SnO2压敏材料电学性质的影响。当Cr2O3的含量从0增加到0.15mol%时,(Co,Ta)掺杂SnO2压敏电阻的击穿电压从206V/mm增加到493V/mm;1kHz时的相对介电常数从1968猛降至498;晶界势垒高度分析表明,SnO2晶粒尺寸的迅速减小是样品击穿电压增高、相对介电常数急剧降低和电阻率迅速增大的主要原因。对Cr含量增加引起SnO2晶粒减小的原因进行了解释。掺杂0.15mol%Cr2O3的SnO2压敏电阻非线性系数为24,击穿电压达498V/mm,在高压保护领域有很好的应用前景。

     

    Abstract: The effects of Cr on the electrical properties of the(Co,Ta)-doped SnO2 varistors were investigated.The breakdown voltag e of the SnO2 based varistors increases from 206V/mm to 493V/mm,the relative dielectric constant decreases significantly from 1968to 498at 1kHz with Cr2 O3 concentra-tion increasing from 0to 0.15mol%.Measurement of the barrier height at g rain boundary reveal that the reason why breakdown voltage resistivity increases and relative die lectric constant decreases is the significant decrease of the SnO2 grain size with Cr2 O3 concentration increasing from 0to 0.15mol%.The origin for the deduction of SnO2 grain size with Cr2 O3 concentration increasing is explained.The 0.15mol% Cr2 O3-doped SnO2 varistor with breakdown voltage of 493V/mm and larger nonlinear coefficient (α=24) is a candidate used in the high voltage protection system.

     

/

返回文章
返回