掺氮类金刚石薄膜的微观结构和电导特性

Microstructure and conductivity of hydrogenated carbon nitride film

摘要: 用射频等离子体化学气相沉积法（RFCVD）和CH₄、N₂与Ar组成的混合气体制备掺氮类金刚石薄膜（a-C:H:N）。用原子力显微镜（AFM），俄歇电子能谱（AES），红外光谱（IR）以及显微拉曼谱（Micro-Raman）对a-C:H:N薄膜的表面形貌、组分和微观结构进行了表征。实验结果表明，薄膜中有纳米量级的颗粒存在，而且随反应气体中N₂与CH₄比值的增大，薄膜中氮元素的含量也随之增大，并主要以C-N键和N-H键形式存在，少量以C≡N键形式存在。还研究了热退火对a-C:H:N薄膜的电导率的影响。

Abstract: Microstructures of nitrogen incorporated hydrogenated carbon (a-C:H:N) films deposited by radio frequency plasma enhanced chemical vapor deposition (PECVD) method were characterized by Atomic Force Microscopes (AFM), Auger Electron Spectra (AES), Infrared (IR) and MicroRaman spectra. Results indicate that there are some nanometer particles existed in the films. The content of nitrogen in the films increases with the ratio of N₂ to CH₄ in the gas mixture. The large amount of nitrogen in the films takes the form of C-N and N-H, small amount of that takes the form of C≡N. The influence of thermal annealing on the conductivity of a-C:H:N films was also investigated.