Abstract: In this work, we report a simulation method of RIE technology based on RIE of silicon using SF₆/N₂ mixture gases. Our approach consists of the following elements:（a） fitting and optimization in parts.（b）modeling by artificial neural network. The system of RIE simulation can be used to predict the etching rate and the aspect ratio. Also the modeling can be used for general purpose and is independent on etching equipment.