Abstract: The transparent conduct oxide film-ZnO:Ga thin film was fabricated by sol-gel technique and was used as current diffusion layer in the GaN-based LED.It was found that the GZO thin film has a poly-crystalline structure.The transmittance property of the GZO film coated on the glass is over 80% and the roughness is Ra 4.6nm.A turn-on voltage of 2.4V and blue light were successfully observed in the LED using the GZO as current diffusion layer by sol-gel technique.It is believed that sol-gel technique is a promising method to fabricate the current diffusion layer instead of traditional methods.