Abstract: The HfO_x thin film with resistive switching behaviors was grown on ITO/Glass substrate by Radio frequency-magnetron sputtering method.The electrical properties and chemical composition of the film were analyzed.The results of Electrical tests indicate that Cu/HfO_x/Ti show a clearly bi-polar resistive switching without a forming process is revealed.The memory also performs great reliability,and the high-resistance to low-resistance ratio is greater than 10.XPS analysis shows that film contains large amounts of oxygen vacancies.Cu is not throughout the whole HfO_x thin film.The mechanism of resistive switching may be associated with oxygen vacancies.