Abstract: The body bias effects on the single-event-transient（SET） of silicon-on-insulator（SOI）CMOS technology are studied by TCAD 3D simulations.Five various particles from carbon to copper with different energies and LETs（Linear Energy Transfer） inject the transistors or circuits.The normalized collected charge in NMOS and PMOS are studied with different body bias induced by heavy ions.The SET performance,in terms of collected charge and transient pulse width,is greatly enhanced by proper body bias configurations.These results suggest a new way to mitigate single event effects in integrated circuits for space and military applications.