WN/W难熔栅自对准增强型n沟道HFET

WN/W anisotype-gate self-aligned process for n-channel HFET

摘要: 发展了WN/W难熔栅自对准工艺。WN/W栅在850℃下退火，保持了较好的形貌。在此工艺基础上研制出了适用于互补逻辑电路的增强型n沟道异质结场效应晶体管。在1×50μm的HFET中，实现了最大跨导约为56mS/mm，阈值电压为3.5V。与p型HFET的-3V的阈值基本对称。反向击穿电压为4～5V。

Abstract: A WN/W anisotype-gate self-aligned HFET process was developed for CHFETs. The ohmic contact for source and drain was achieved by Si⁺ implantation and following rapid anealing at 850℃. Using this process, we fabricated enchanced n channel HFET. Typical transconductance is 56mS/mm, and reverse breakdown voltage 4~5V with 1 μm gate length.