ZnSe基量子阱的低压MOCVD生长及性能表征

THE QUALITY OF ZnSe-BASED MQWS GROWN BY LOW PRESSURE METALORGANIC CHEMICAL VAPOUR DEPOSITION

摘要: 用低压－金属有机化学气相沉积（LP-MOCVD）方法生长了ZnCdSe-ZnSe和ZnTeSe-ZnSe多量子阱（MQWs）。在生长室压力38tor（5×10₃Pa），衬底面积19×20mm²的GaAs衬底上，生长100周期的ZnCdSe-ZnSeMQWs，经扫描电镜测量，生长不均匀性仅小于10%。随生长压强增大，生长不均匀性也增大。在相同条件下生长10周期的ZnCdSe-ZnSe和ZnTeSe-ZnSeMQWS，在X-射线衍射谱上分别可观测到0，1级和0，1，2级卫星峰，随生长周期增加，其特性越明显。在生长50周期的ZnTeSe-ZnSeMQWSs中可观测到0，1，2，3级卫星峰。在77K，脉冲N₂激光器激发的ZnTeSE-ZnSeMQWs中观测到了起因于激子的受激发射。

Abstract: ZnCdSe-ZnSe and ZnTeSe-ZnSe multiple quantum wells (MQWs) were grown by low pressure-metalorganic chemical vapour deposition (LP-MOCVD). At 38 torr (5×10³ Pa), the thickness uniformity of ZnCdSe-ZnSe MQWs with 100 periods grown on GaAs substrate of 19×20mm² in area was more than 90% measured by using scanning electron microscope. The x-ray diffraction showed multiple satellite peaks from ZnCdSe-ZnSe and ZnTeSe-ZnSe MQWs with 10 and 50 periods, respectively. Above results indicated that good ZnSe-based MQWs structures were obtained.