反应溅射Si-C-N薄膜的结构分析

STRUCTURAL ANALYSIS OF SiCN FILM PREPARED BY REACTIVE SPUTTERING

    摘要
  • 摘要: 本文用射频反应磁控溅射制备了SiCN薄膜 ,对薄膜的化学成分、结构进行了研究。结果表明 ,反应气体N2 、Si、C三者之间形成了Si-C、Si-N和C-N键 ,构成了复杂的网络结构。成分分析表明薄膜的化学计量式近似为SiCN。对比分析了反应溅射制备SiCN、CNx、SiNy和SiCz 薄膜的FTIR谱。

     

    Abstract: In this paper, the SiCN films were prepared by reactive magnetron sputtering and the structural analyses were carried out by XPS and FTIR. The results showed that C, N, and Si were bonded with each other. A complex network formed consequently. The stoichiometric proportion of the prepared films is approximately Si:C:N=1:1:1. The FTIR spectra of SiCN films as well as amorphous CNx, SiNy and SiCz films were also given in this paper.

     

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