Abstract: Microwave filter integrated on the silicon chip was fabricated by technology of the microelectromechanical system (MEMS). A cubic capacitor of filter was realized through the processes of deep trench which etched by the ICP, so that areas of patterns of the cubic capacitors is decreased to one third of the plane capacitors. The plane inductor of the filter was manufactured on the insulation diagram under which the silicon substrate had been removed away. It lessened the substrate loss and improved the quality of the filter. The main merit of the 3D capacitor is to reduce the area of the pattern. The process of design and manufacture of the filter, capacitor and inductor is also discussed in this paper. A conductor of the filter is fabricated by using photosensitive polyimide electroplating molds. So the quality factor of the filter is raised.