Abstract: In this paper, we report the carrier concentration reducing of unintentionally doped InGaAsSb and the MBE growth and characterization of Te-doped n-type GaSb and InGaAsSb. By improving of MBE growth procedure, the background hole concentrations of GaSb and InGaAsSb have been decreased to 1.1×10¹⁶cm^-3 and 4×10¹⁶cm^-3, respectively. The ambient hole mobility are 940cm²/v.s and 260 cm²/v.s, respectively. Using Te as the n-type dopant, we obtain the high quality epitaxial layers of GaSb and InGaAsSb with carrier concentration ranging from 10¹⁶cm^-3 to 10¹⁶cm^-3. Using these materials, we have processed ambient InGaAsSb photodetector (D_λ^*=4×10¹⁰cmHz^1/2/W) and AlGaAsSb/InGaAsSb pulsed double heterostructure laser device (DHLD).